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Epitaxial $p$-type transparent conducting oxide (TCO) $\mathrm{C}{\mathrm{r}}_{2}{\mathrm{O}}_{3}:\mathrm{Mg}$ was grown by electron-beam evaporation in a molecular beam epitaxy system on $c$-plane sapphire. The influence of Mg dopants and the oxygen partial pressure were investigated by thermoelectric and electrical measurements. The conduction mechanism is analyzed using the small-polaron hopping model, and hopping activation energies have been determined, which vary with doping concentration in the range of 210--300 \ifmmode\pm\else\textpm\fi{} 5 meV. Films with better conductivity were obtained by postannealing. The effect of postannealing is discussed in terms of a crystallographic reordering of the Mg dopant. The highest Seebeck mobilities obtained from thermoelectric measurements are of the order of ${10}^{\ensuremath{-}4}\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{2}{\mathrm{V}}^{\ensuremath{-}1}{\mathrm{s}}^{\ensuremath{-}1}$. We investigate the fundamental properties of a Mg dopant in a high crystalline quality epitaxial film of a binary oxide, helping us understand the role of short range crystallographic order in a $p$-type TCO in detail.

physical review b

Conducting mechanism in the epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>p</mml:mi></mml:math>-type transparent conducting oxide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi mathvariant="normal">C</mml:mi><mml:msub><mml:mi mathvariant="normal">r</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>:</mml:mo><mml:mi>Mg</mml:mi></mml:mrow></mml:math>

Conducting mechanism in the epitaxialp-type transparent conducting oxideCr2O3:Mg