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We present a first principles method for calculating the inelastic electrontunneling spectroscopy (IETS) on gated graphene. We reproduce experiments onpristine graphene and point out the importance of including several phononmodes to correctly estimate the local doping from IETS. We demonstrate how theIETS of typical imperfections in graphene can yield characteristic fingerprintsrevealing e.g. adsorbate species or local buckling. Our results show how careis needed when interpreting STM images of defects due to suppression of theelastic tunneling on graphene.

Unravelling the role of inelastic tunneling into pristine and defected graphene