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Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitizedSiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth modeand exhibit two dominant types of defects, identified as Se vacancy andinterstitial, respectively. By means of scanning tunneling microscopy, wedemonstrate that the well-established charge density waves can survive insingle unit-cell (one triple layer) regime, and find a gradual reduction intheir correlation length as the density of surface defects in TiSe2 ultrathinfilms increases. Our findings offer important insights into the nature ofcharge density wave in TiSe2, and also pave a material foundation for potentialapplications based on the collective electronic states.

Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe$_2$ ultrathin films