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Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAsquantum well structure reveal a series of ultra-narrow peaks attributed to thequantum confined exciton states. The intensity of these peaks decreases as afunction of temperature, while the linewidths demonstrate a complex andpeculiar behavior. At low pumping the widths of all peaks remain quite narrow($< 0.1$ meV) in the whole temperature range studied, $4 - 30K$. At thestronger pumping, the linewidth first increases and than drops down with thetemperature rise. Pump-probe experiments show two characteristic time scales inthe exciton decay, $< 10$ps and $15 - 45ns$, respectively. We interpret allthese data by an interplay between the exciton recombination within the lightcone, the exciton relaxation from a non-radiative reservoir to the light cone,and the thermal dissociation of the non-radiative excitons. The broadening ofthe low energy exciton lines is governed by the radiative recombination andscattering with reservoir excitons while for the higher energy states thelinewidths are also dependent on the acoustic phonon relaxation processes.

Nontrivial relaxation dynamics of excitons in high-quality InGaAs/GaAs quantum wells