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Spin gapless semiconductors (SGS) form a new class of magneticsemiconductors, which has a band gap for one spin sub band and zero band gapfor the other, and thus are useful for tunable spin transport basedapplications. In this paper, we report the first experimental evidence for spingapless semiconducting behavior in CoFeMnSi Heusler alloy. Such a behavior isalso confirmed by first principles band structure calculations. The most stableconfiguration obtained by the theoretical calculation is verified byexperiment. The alloy is found to crystallize in the cubic Heusler structure(LiMgPdSn type) with some amount of disorder and has a saturation magnetizationof 3.7 Bohr's magneton/f.u.. and Curie temperature of 620 K. The saturationmagnetization is found to follow the Slater-Pauling behavior, one of theprerequisites for SGS. Nearly temperature-independent carrier concentration andelectrical conductivity is observed from 5 to 300 K. An anomalous Hallcoefficient of 162 S/cm is obtained at 5 K. Point contact Andreev reflectiondata has yielded the current spin polarization value of 0.64, which is found tobe robust against the structural disorder. All these properties are quitepromising for the spintronic applications such as spin injection and can bridgea gap between the contrasting behavior of half-metallic ferromagnets andsemiconductors.

Spin gapless semiconducting behavior in equiatomic quaternary CoFeMnSi Heusler alloy