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Discovering new antiferromagnetic compounds is at the forefront of developingfuture spintronic devices without fringing magnetic fields. Theantiferromagnetic gapless semiconducting D03 phase of V3Al was successfullysynthesized via arc-melting and annealing. The antiferromagnetic propertieswere established through synchrotron measurements of the atom-specific magneticmoments, where the magnetic dichroism reveals large and oppositely-orientedmoments on individual V atoms. Density functional theory calculations confirmedthe stability of a type G antiferromagnetism involving only two-third of the Vatoms, while the remaining V atoms are nonmagnetic. Magnetization, x-raydiffraction and transport measurements also support the antiferromagnetism.This archetypal gapless semiconductor may be considered as a cornerstone forfuture spintronic devices containing antiferromagnetic elements.

Antiferromagnetic phase of the gapless semiconductor V3Al