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Diffusion of Ga adatom at the As rich, low temperature c(4$\times$4)reconstructions of GaAs(001) surface is analyzed. We use known energy landscapefor the motion of Ga adatom at two different $\alpha$ and $\beta$ surfacephases to calculate diffusion tensor by means of the variational approach.Diffusion coefficient describes the character of low density adatom systemmotion at the surface. The resulting expressions allow to identify main pathsof an adatom diffusion and to calculate an activation energy of this process.It is shown that diffusion at the $\alpha$ surface is slower and moreanisotropic than this for the $\beta$ surface.

Diffusion of Ga adatoms at the surface of GaAs(001) c(4x4) $\alpha$ and $\beta$ reconstructions