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The disordered potential landscape in an InGaAs/InAlAs two-dimensionalelectron gas patterned into narrow wires is investigated by means of scanninggate microscopy. It is found that scanning a negatively charged tip aboveparticular sites of the wires produces conductance oscillations that areperiodic in the tip voltage. These oscillations take the shape of concentriccircles whose number and diameter increase for more negative tip voltages untilfull depletion occurs in the probed region. These observations cannot beexplained by charging events in material traps, but are consistent with Coulombblockade in quantum dots forming when the potential fluctuations are raisedlocally at the Fermi level by the gating action of the tip. This interpretationis supported by simple electrostatic simulations in the case of a disorderpotential induced by ionized dopants. This work represents a localinvestigation of the mechanisms responsible for the disorder-inducedmetal-to-insulator transition observed in macroscopic two-dimensional electronsystems at low enough density.

Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy