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The structural and transport properties of polycrystalline Ti1−xPtxSe2−y(x≤0.13,y≤0.2) are studied, revealing highly tunable electrical properties, spanning nearly ten orders of magnitude in scaled resistivity. Using x-ray and neutron diffraction, Pt is found to dope on the Ti site. In the absence of Pt doping (for x=0), Se deficiency (y>0) increases the metallic character of TiSe2, while a large increase of the low-temperature resistivity is favored by a lack of Se deficiency (y=0) and increasing amounts of doped Pt (x>0). The chemical tuning of the resistivity in Ti1−xPtxSe2−y with Se deficiency and Pt doping results in a metal-to-insulator transition. Simultaneous Pt doping and Se deficiency (x,y>0) confirms the competition between the two opposing trends in electrical transport, with the main outcome being the suppression of the charge density wave transition below 2 K for y=2x=0.18. Band structure calculations on a subset of Ti1−xPtxSe2−y compositions are in line with the experimental observations

physical review. b, condensed matter and materials physics

Chemical tuning of electrical transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">Ti</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mtext>−</mml:mtext><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Pt</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi mathvariant="normal">Se</mml:mi><mml:mrow><mml:mn>2</mml:mn><mml:mtext>−</mml:mtext><mml:mi>y</mml:mi></mml:mrow></mml:msub></mml:math>

Chemical tuning of electrical transport inTi1−xPtxSe2−y