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Nearly a decade after the discovery of topological insulators (TIs), theimportant task of identifying and characterizing their topological surfacestates through electrical transport experiments remains incomplete. Theinterpretation of these experiments is made difficult by the presence ofresidual bulk carriers and their coupling to surface states, which is not yetwell understood. In this work, we present the first evidence for the existenceand control of bulk-surface coupling in Bi2Te2Se nanoribbons, which arepromising platforms for future TI-based devices. Our magnetoresistancemeasurements reveal that the number of coherent channels contributing toquantum interference in the nanoribbons changes abruptly when the filmthickness exceeds the bulk phase relaxation length. We interpret thisobservation as an evidence for bulk-mediated coupling between metallic stateslocated on opposite surfaces. This hypothesis is supported by additionalmagnetoresistance measurements conducted under a set of gate voltages and in aparallel magnetic field, the latter of which alters the intersurface couplingin a controllable way.

Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons