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We present an atomistic description of the electronic and optical propertiesof $\text{In}_{0.25}\text{Ga}_{0.75}$N/GaN quantum wells. Our analysis accountsfor fluctuations of well width, local alloy composition, strain and built-infield fluctuations as well as Coulomb effects. We find a strong hole and muchweaker electron wave function localization in InGaN random alloy quantum wells.The presented calculations show that while the electron states are mainlylocalized by well-width fluctuations, the holes states are already localized byrandom alloy fluctuations. These localization effects affect significantly thequantum well optical properties,leading to strong inhomogeneous broadening ofthe lowest interband transition energy. Our results are compared withexperimental literature data.

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells