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We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgOnanowires. Domain walls are observed to move against the electron flow when nomagnetic field is applied, while a field along the nanowires strongly affectsthe domain wall motion direction and velocity. A symmetric effect is observedfor up-down and down-up domain walls. This indicates the presence ofright-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI)with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient isinterpreted to be a consequence of boron diffusion into the tantalum bufferlayer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along theelectron flow was observed, corroborating this interpretation. The experimentalresults are compared to 1D-model simulations including the effects of pinning.This advanced modelling allows us to reproduce the experiment outcomes andreliably extract a spin-Hall angle {\theta}SH=-0.11 for Ta in the nanowires,showing the importance of an analysis that goes beyond the currently used modelfor perfect nanowires.

Interfacial Dzyaloshinskii-Moriya interaction in Ta\Co20Fe60B20\MgO nanowires