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The chiral two-dimensional electron gas in Landau levels $\left\vertN\right\vert >0$ of a Bernal-stacked graphene bilayer has a valley-pseudospinIsing quantum Hall ferromagnetic behavior at odd filling factors $\nu _{N}=1,3$of these fourfold degenerate states. At zero interlayer electrical bias, theground state at these fillings is spin polarized and electrons occupy onevalley or the other while a finite electrical bias produces a series of valleypseudospin-flip transitions. In this work, we extend the Ising behavior tochirally-stacked multilayer graphene and discuss the hysteretic behavior of theIsing quantum Hall ferromagnets. We compute the transport gap due to differentexcitations: bulk electron-hole pairs, electron-hole pairs confined to thecoherent region of a valley-pseudospin domain wall, and spin orvalley-pseudospin skyrmion-antiskyrmion pairs. We determine which of theseexcitations has the lowest energy at a given value of the Zeeman coupling,bias, and magnetic field.

Transport gap and hysteretic behavior of the Ising quantum Hall ferromagnets in Landau levels $\left\vert N\right\vert >0$ of bilayer graphene