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We investigate the effects of homogeneous and inhomogeneous deformations andedge disorder on the conductance of gated graphene nanoribbons. Underincreasing homogeneous strain the conductance of such devices initiallydecreases before it acquires a resonance structure, and finally becomescompletely suppressed at larger strain. Edge disorder induces mode mixing inthe contact regions, which can restore the conductance to its ballistic value.The valley-antisymmetric pseudo-magnetic field induced by inhomogeneousdeformations leads to the formation of additional resonance states, whicheither originate from the coupling into Fabry-Perot states that extend throughthe system, or from the formation of states that are localized near thecontacts, where the pseudo-magnetic field is largest. In particular, the n=0pseudo-Landau level manifests itself via two groups of conductance resonancesclose to the charge neutrality point.

Strain-induced modifications of transport in gated graphene nanoribbons