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The ultimate limitations on carrier mobilities in metal dichalcogenides, andthe dynamics associated with carrier relaxation, are unclear. We presentmeasurements of the frequency-dependent conductivity of multilayerdichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We findmobilities in this material approaching 4200 cm2/Vs at low temperatures. Thetemperature dependence of scattering indicates that the mobility, an order ofmagnitude larger than previously reported for MoS2, is intrinsically limited byacoustic phonon scattering at THz frequencies. Our measurements of carrierrelaxation reveal picosecond cooling times followed by recombination lastingtens of nanoseconds and dominated by Auger scattering into defects. Our resultsprovide a useful context in which to understand and evaluate the performance ofMoS2-based electronic and optoelectronic devices.

High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2