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Motivated by the recent atomic-scale scanning tunneling microscope (STM)observation for a spatially localized in-gap state in an electron doped Mottinsulator, we evaluate the local electronic state of the Hubbard model on thesquare lattice using the cluster perturbation theory. An in-gap state is foundto exist below the upper Hubbard band around the dopant lattice site, which isconsistent with the STM measurements. The emergence of this local in-gap stateis accompanied with a rapid reduction of the double occupancy of electrons. Asimilar in-gap state is also found to exist on the triangular lattice. Theseresults suggest that the in-gap state is an inherent feature of Mott insulatorsindependent of the lattice structure.

Localized in-gap state in a single electron doped Mott insulator