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Absence of backscattering and occurrence of weak anti-localization are twocharacteristic features of topological insulators. We find that theintroduction of defects results in the appearance of a negative contribution tomagnetoresistance in the topological insulator BiSbTeSe2, at temperatures below50 K. Our analysis shows that the negative magnetoresistance originates from anincrease in the density of defect states created by introduction of disorder,which leaves the surface states unaffected. We find a decrease in the magnitudeof the negative magnetoresistance contribution with increasing temperature anda robustness of the topological surface states to external disorder.

Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2