English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We study the relaxation of an electron spin qubit in a Si quantum dot due toelectrical noise. In particular, we clarify how the presence of conduction-bandvalleys influences spin relaxation. In single-valley semiconductor quantumdots, spin relaxation is through the mixing of spin and envelope orbital statesvia spin-orbit interaction. In Si, the relaxation could also be through themixing of spin and valley states. We find that the additional spin relaxationchannel, via spin-valley mixing and electrical noise, is indeed important foran electron spin in a Si quantum dot. By considering both spin-valley andintravalley spin-orbit mixings and Johnson noise in a Si device, we find thatthe spin relaxation rate peaks at the hot spot, where the Zeeman splittingmatches the valley splitting. Furthermore, because of a weaker fielddependence, the spin relaxation rate due to Johnson noise could dominate overphonon noise at low magnetic fields, which fits well with recent experiments.

Spin relaxation in a Si quantum dot due to spin-valley mixing