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The characteristics of shallow hydrogen-like muonium (Mu) states in nominallyundoped ZnO and CdS (0001) crystals have been studied close to the surface atdepths in the range of 10 nm - 180 nm by using low-energy muons, and in thebulk using conventional muSR. The muon implantation depths are adjusted bytuning the energy of the low-energy muons between 2.5 keV and 30 keV. We findthat the bulk ionization energy of the shallow donor-like Mu state is loweredby about 10 meV at a depth of 100 nm, and continuously decreasing onapproaching the surface. At a depth of about 10 nm the ionization energy isfurther reduced by 25-30 meV compared to its bulk value. We attribute thischange to the presence of electric fields due to band bending close to thesurface, and we determine the depth profile of the electric field within asimple one-dimensional model.

Depth dependence of the ionization energy of shallow hydrogen states in ZnO and CdS