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Spin accumulation in a paramagnetic semiconductor due to voltage-biasedcurrent tunneling from a polarized ferromagnet is experimentally manifest as asmall additional spin-dependent resistance. We describe a rigorous modelincorporating the necessary self-consistency between electrochemical potentialsplitting, spin-dependent injection current, and applied voltage that can beused to simulate this so-called "3T" signal as a function of temperature,doping, ferromagnet bulk spin polarization, tunnel barrier features andconduction nonlinearity, and junction voltage bias.

Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions