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Spin injection in high-quality epitaxial Mn5Ge3 Schottky contacts on n-typeGe has been investigated using a three-terminal Hanle effect measurement. ClearHanle and inverted Hanle signals with features characteristic of spinaccumulation and spin precession are observed up to 200 K. Strikingly, theobserved spin voltage is several orders of magnitude larger than predicted bythe theory of spin injection and diffusive spin transport. Since the deviceshave no oxide tunnel barrier, the discrepancy between theory and experimentscannot be explained by the often-invoked spin accumulation in localized statesassociated with the oxide or oxide/semiconductor interface. The observed spinvoltages therefore must originate from the Ge itself, either from spins in theGe bulk bands or its depletion region.

Large spin accumulation voltages in epitaxial Mn5Ge3 contacts on Ge without oxide tunnel barrier