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The fundamental property of most single-electron devices with quasicontinuousquasiparticle spectrum on the island is the periodicity of their transportcharacteristics in the gate voltage. This property is robust even with respectto placing the ferroelectric insulators in the source and drain tunneljunctions. We show that placing the ferroelectric inside the gate capacitancebreaks this periodicity. The current-voltage characteristics of this SETstrongly depends on the ferroelectric polarization and shows the giantmemory-effect even for negligible ferroelectric hysteresis making this devicepromising for memory applications.

Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage