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We investigate time-dependent, room-temperature quantum electronic transport in GaAs/AlGaAs doublebarrier tunneling structures (DBTSs). The open-boundary Wigner-Boltzmann transport equation is solved by the stochastic ensemble Monte Carlo technique, coupled with Poisson’s equation and including electron scattering with phonons and ionized dopants. We observe well-resolved and persistent terahertz-frequency current-density oscillations in uniformly doped, dc-biased DBTSs at room temperature. We show that the origin of these intrinsic current oscillations is not consistent with previously proposed models, which predicted an oscillation frequency given by the average energy difference between the quasibound states localized in the emitter and main quantum wells. Instead, the current oscillations are driven by the long-range Coulomb interactions, with the oscillation frequency determined by the ratio of the charges stored in the emitter and main quantum wells. We discuss the tunability of the frequency by varying the doping density and profile.

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure