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By successive oxygen treatments of graphene non-local spin-valve devices weachieve a gradual increase of the contact resistance area products ($R_cA$) ofCo/MgO spin injection and detection electrodes and a transition from linear tonon-linear characteristics in the respective differential dV-dI-curves. Withthis manipulation of the contacts both spin lifetime and amplitude of the spinsignal can significantly be increased by a factor of seven in the same device.This demonstrates that contact-induced spin dephasing is the bottleneck forspin transport in graphene devices with small $R_cA$ values. With increasing$R_cA$ values, we furthermore observe the appearance of a second chargeneutrality point (CNP) in gate dependent resistance measurements.Simultaneously, we observe a decrease of the gate voltage separation betweenthe two CNPs. The strong enhancement of the spin transport properties as wellas the changes in charge transport are explained by a gradual suppression of aCo/graphene interaction by improving the oxide barrier during oxygen treatment.

Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments