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Topological insulators are known to their metallic surface states, a resultof strong-spin-orbital coupling, that show unique surface transport phenomenon.But these surface transports are buried in presence of metallic bulkconduction. We synthesized very high quality Bi$_2$Te$_2$Se single crystals bymodified Bridgman method, that possess high bulk resistivity of$>$20~$\Omega$cm below 20~K, whereas the bulk is mostly inactive and surfacetransport dominates. Temperature dependence resistivity follows the activationlaw like a gap semiconductor in temperature range 20-300~K. We designed aspecial measurement geometry, which aims to extract the surface transport fromthe bulk. This special geometry is applied to measure the resistance and foundthat Bi$_2$Te$_2$Se single crystal exhibits a cross over from bulk to surfaceconduction at 20~K. Simultaneously, the material also shows strong evidence ofweak anti-localization in magneto-transport due to the protection againstscattering by conducting surface states. This novel simple geometry is an easyroute to find the evidence of surface transport in topological insulators,which are the promising materials for future spintronic applications.

Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator