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We show that finite temperature variational cluster approximation (VCA)calculations on an extended Falicov-Kimball model can reproduce angle-resolvedphotoemission spectroscopy (ARPES) results on Ta2NiSe5 across asemiconductor-to-semiconductor structural phase transition at 325 K. Wedemonstrate that the characteristic temperature dependence of the flat-topvalence band observed by ARPES is reproduced by the VCA calculation on therealistic model for an excitonic insulator only when the strong excitonicfluctuation is taken into account. The present calculations indicate thatTa2NiSe5 falls in the Bose-Einstein condensation regime of the excitonicinsulator state.

Excitonic Bose-Einstein condensation in Ta2NiSe5 above room temperature