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Combining experimental data, numerical transport calculations, andtheoretical analysis, we study the temperature-dependent resistivity ofhigh-mobility 2D Si MOSFETs to search for signatures of weak localizationinduced quantum corrections in the effective metallic regime above the criticaldensity of the so-called two-dimensional metal-insulator transition (2D MIT).The goal is to look for the effect of logarithmic insulating localizationcorrection to the metallic temperature dependence in the 2D conductivity so asto distinguish between the 2D MIT being a true quantum phase transition versusbeing a finite-temperature crossover. We use the Boltzmann theory ofresistivity including the temperature dependent screening effect on chargedimpurities in the system to fit the data. We analyze weak perpendicluar fieldmagnetoresistance data taken in the vicinity of the transition and show thatthey are consistent with weak localization behavior in the strongly disorderedregime $k_F\ell\gtrsim1$. Therefore we supplement the Botzmann transport theorywith a logarithmic in temperature quantum weak localization correction andanalyze the competition of the insulating temperature dependence of thiscorrection with the metallic temperature dependence of the Boltzmannconductivity. Using this minimal theoretical model we find that the logarithmicinsulating correction is masked by the metallic temperature dependence of theBotzmann resistivity and therefore the insulating $\log T$ behavior may beapparent only at very low temperatures which are often beyond the range oftemperatures accessible experimentally. Analyzing the low-$T$ experimental SiMOSFET transport data we identify signatures of the putative insulatingbehavior at low temperature and density in the effective metallic phase.

Signatures of localization in the effective metallic regime of high mobility Si MOSFETs