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We have carried out a systematic experimental investigation to address thequestion why thin films of Fe$_3$O$_4$ (magnetite) generally have a very broadVerwey transition with lower transition temperatures as compared to the bulk.We observed using x-ray photoelectron spectroscopy, x-ray diffraction andresistivity measurements that the Verwey transition in thin films isdrastically influenced not only by the oxygen stoichiometry but especially alsoby the substrate-induced microstructure. In particular, we found (1) that thetransition temperature, the resistivity jump, and the conductivity gap of fullystoichiometric films greatly depends on the domain size, which increasesgradually with increasing film thickness, (2) that the broadness of thetransition scales with the width of the domain size distribution, and (3) thatthe hysteresis width is affected strongly by the presence of antiphaseboundaries. Films grown on MgO (001) substrates showed the highest and sharpesttransitions, with a 200 nm film having a T$_V$ of 122K, which is close to thebulk value. Films grown on substrates with large lattice constant mismatchrevealed very broad transitions, and yet, all films show a transition with ahysteresis behavior, indicating that the transition is still first order ratherthan higher order.

Verwey transition in Fe$_{3}$O$_{4}$ thin films: Influence of oxygen stoichiometry and substrate-induced microstructure