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We demonstrate a large electrical spin injection into GaAs at zero magneticfield thanks to an ultrathin perpendicularly magnetized CoFeB contact of a fewatomic planes (1.2 nm). The spin-polarization of electrons injected into GaAswas examined by the circular polarization of electroluminescence from a SpinLight Emitting Diode with embedded InGaAs/GaAs quantum wells. Theelectroluminescence polarization as a function of the magnetic field closelytraces the out-of-plane magnetization of the CoFeB/MgO injector. A circularpolarization degree of the emitted light as large as 20% at 25 K is achieved atzero magnetic field. Moreover the electroluminescence circular polarization isstill about 8% at room temperature.

Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector