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We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilizein situ angle-resolved photoemission spectroscopy to investigate the evolutionof its electronic structure through the Neel temperature TN. Our measurementsindicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit anunusual dichotomy in their behavior through the Neel transition. Although thecharge gap survives into the paramagnetic state, only the Jeff=1/2 stateexhibits a strong temperature dependence and its gap softens with increasingtemperature approaching TN, while the nearly fully occupied Jeff=3/2 statewhich remains nearby in energy exhibits negligible changes with temperature.

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4