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We measured the lifetime of optically created valley polarization in singlelayer WS2 using transient absorption spectroscopy. The electron valleyrelaxation is very short (< 1ps). However the hole valley lifetime is at leasttwo orders of magnitude longer and exhibits a temperature dependence thatcannot be explained by single carrier spin/valley relaxation mechanisms. Ourtheoretical analysis suggests that a collective contribution of two potentialprocesses may explain the valley relaxation in single layer WS2. One processinvolves direct scattering of excitons from K to K' valleys with a spinflip-flop interaction. The other mechanism involves scattering through spindegenerate Gamma valley. This second process is thermally activated with anArrhenius behavior due to the energy barrier between Gamma and K valleys.

Temperature Dependent Valley Relaxation Dynamics in Single Layer WS2 Measured Using Ultrafast Spectroscopy