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We study normal state electrical, thermoelectrical and thermal transport inpolycrystalline BiS2-based compounds, which become superconducting by F dopingon the O site. In particular we explore undoped LaOBiS2 and dopedLaO0.5F0.5BiS2 samples, prepared either with or without high pressureannealing, in order to evidence the roles of doping and preparation conditions.The high pressure annealed sample exhibits room temperature values ofresistivity ro around 5 mohmcm, Seebeck coefficient S around -20 microV/K andthermal conductivity k around 1.5 W/Km, while the Hall resistance RH isnegative at all temperatures and its value is -10-8 m3/C at low temperature.The sample prepared at ambient pressure exhibits RH positive in sign and fivetimes larger in magnitude, and S negative in sign and slightly smaller inmagnitude. These results reveal a complex multiband evolution brought about byhigh pressure annealing. In particular, the sign inversion and magnitudesuppression of RH, indicating increased electron-type carrier density in thehigh pressure sample, may be closely related to previous findings about changein lattice parameters and enhancement of superconducting Tc by high pressureannealing. As for the undoped sample, it exhibits the 10 times largerresistivity, 10 times larger |S| and 10 times larger |RH| than its dopedcounterpart, consistently with its insulating nature. Our results point out thedramatic effect of preparation conditions in affecting charge carrier densityas well as structural, band and electronic parameters in these systems.

Effect of high pressure annealing on the normal state transport of LaO0.5F0.5BiS2