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The spin Seebeck effect is studied across a charge insulating magneticjunction, in which thermal-spin conjugate transport is assisted by the exchangeinteractions between the localized spin in the center and electrons in metallicleads. We show that, in contrast with bulk spin Seebeck effect, the figure ofmerit of such nanoscale thermal-spin conversion can be infinite, leading to theideal Carnot efficiency in the linear response regime. We also find that in thenonlinear spin Seebeck transport regime, the device possesses the asymmetricand negative differential spin Seebeck effects. In the last, the situationswith leaking electron tunneling are also discussed. This nanoscale thermal spinrectifier, by tuning the junction parameters, can act as a spin Seebeck diode,spin Seebeck transistor and spin Seebeck switch, which could have substantialimplications for flexible thermal and information control in molecular spincaloritronics.

Nanoscale Spin Seebeck Rectifier: Controlling Thermal Spin Transport across Insulating Magnetic Junctions with Localized Spin