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We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAsheterostructure to study disorder effects via magnetoconductance fluctuations(MCF) at millikelvin temperatures. Recent experiments in electron quantum dotshave shown that the MCF is sensitive to the disorder potential created byremote ionised impurities. We utilize this to study the temporal/thermalstability of Si acceptors in p-type AlGaAs/GaAs heterostructures. Inparticular, we use a surface gate to cause charge migration between Si acceptorsites at T = 40 mK, and detect the ensuing changes in the disorder potentialusing the MCF. We show that Si acceptors are metastable at T = 40 mK and thatraising the device to a temperature T = 4.2 K and returning to T = 40 mK issufficient to produce complete decorrelation of the MCF. The same decorrelationoccurs at T ~ 165 K for electron quantum dots; by comparing with the known trapenergy for Si DX centers, we estimate that the shallow acceptor traps in ourheterostructures have an activation energy EA ~ 3 meV. Our method can be usedto study charge noise and dopant stability towards optimisation ofsemiconductor materials and devices.

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot