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We report the results of a combined microwave polarization-dependence andpower-dependence study of the microwave-radiation-induced magnetoresistanceoscillations in high mobility GaAs/AlGaAs heterostructure devices at liquidhelium temperatures. The diagonal resistance was measured with the magneticfield fixed at the extrema of the radiation-induced magnetoresistanceoscillations, as the microwave power was varied at a number of microwavepolarization angles. The results indicate a nonlinear relation between theoscillatory peak or valley magnetoresistance and the microwave power, as wellas a cosine square relation between the oscillatory peak or valleymagnetoresistance and the microwave polarization angle. The main features arebriefly compared with the predictions of existing models.

physical review. b, condensed matter and materials physics

Combined study of microwave-power/linear-polarization dependence of the  microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs  devices