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Atomically precise tailoring of graphene can enable unusual transportpathways and new nanometer-scale functional devices. Here we describe a recipefor the controlled production of highly regular "5-5-8" line defects ingraphene by means of simultaneous electron irradiation and Joule heating byapplied electric current. High-resolution transmission electron microscopyreveals individual steps of the growth process. Extending earlier theoreticalwork suggesting valley-discriminating capabilities of a graphene 5-5-8 linedefect, we perform first-principles calculations of transport and find a strongenergy dependence of valley polarization of the charge carriers across thedefect. These findings inspire us to propose a compact electrostatically gated"valley valve" device, a critical component for valleytronics.

Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering