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The non-centrosymmetric semiconductor BiTeI exhibits two distinct surfaceterminations that support spin-split Rashba surface states. Their ambipolaritycan be exploited for creating spin-polarized $p$-$n$ junctions at theboundaries between domains with different surface terminations. We use scanningtunneling microscopy/spectroscopy (STM/STS) to locate such junctions andinvestigate their atomic and electronic properties. The Te- and I-terminatedsurfaces are identified owing to their distinct chemical reactivity, and anapparent height mismatch of electronic origin. The Rashba surface states arerevealed in the STS spectra by the onset of a van Hove singularity at the bandedge. Eventually, an electronic depletion is found on interfacial Te atoms,consistent with the formation of a space charge area in typical $p$-$n$junctions.

Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface