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By combining genetic algorithm optimizations, first-principles calculationsand the double-exchange model studies, we have unveiled that the exoticinsulating ferromagnetism in LaMnO3 thin film originates from the previouslyunreported G-type d_{3z^2-r^2}/d_{x^2-y^2} orbital ordering. An insulating gapopens as a result of both the orbital ordering and the strong electron-phononcoupling. Therefore, there exist two strain induced phase transitions in theLaMnO3 thin film, from the insulating A-type antiferromagnetic phase to theinsulating ferromagnetic phase and then to the metallic ferromagnetic phase.These phase transitions may be exploited in tunneling magnetoresistance andtunneling electroresistance related devices.

Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film