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We discuss, by means of mode-matching analysis for the Dirac equation, howsplittings of the Landau-level (LL) degeneracies associated with spin, valley,and layer degrees of freedom affect the ballistic conductance of graphenebilayer. The results show that for wide samples ($W\gg{}L$) theLandauer-B\"{u}ttiker conductance reaches the maximum$G\simeq{}se^2/(\pi{h})\times{}W/L$ at the resonance via each LL, with theprefactor varying from $s=8$ if all three degeneracies are preserved, to $s=1$if all the degeneracies are split. In the absence of bias between the layers,the degeneracies associated with spin and layer degrees of freedom may be splitby manipulating the doping and magnetic field; the conductance at the zeroth LLis twice as large, while the conductance at any other LL equals to thecorresponding conductance of graphene monolayer. The presence of bias potentialallows one also to split the valley degeneracy. Our results show that thecharge transfer at each LL has pseudodiffusive character, with the second andthird cumulant quantified by ${\cal F}=1/3$ and ${\cal R}=1/15$ (respectively).In case the electrochemical potential is allowed to slowly fluctuate in afinite vicinity of LL, the resulting charge-transfer characteristics are stillquantum-limited, with ${\cal F}\simeq{}0.7$ and ${\cal R}\simeq{}0.5$ in thelimit of large fluctuations. The above values of ${\cal F}$ and ${\cal R}$ arealso predicted to be approached in the limit of high source-drain voltagedifference applied. The possible effects of indirect interlayer hoppingintegrals are also briefly discussed.

Pseudodiffusive conductance, quantum-limited shot noise, and Landau-level hierarchy in biased graphene bilayer