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To address the robustness of the transport gap induced by locally strainedregions in graphene nanostructures, the effect of disorder and smoothness ofthe interface region is investigated within the Landauer-B\"uttiker formalism.The electronic conductance across strained junctions and barriers in graphenenanoribbons is calculated numerically, with and without various types ofdisorder, and comparing smooth and sharp strain junctions. A smooth strainbarrier in graphene is seen to be generically as efficient in suppressingtransport at low densities as a sharp one, and the critical density (or energy)for the onset of transmission depends on the strain orientation with respect tothe ribbon. In addition, hopping (or strain) inhomogeneity and work functionmismatch at the interface region do not visibly degrade the transport gap.These results show that the strain-induced transport gap at a strain junctionis robust to more realistic strain conditions.

Conductance across strain junctions in graphene nanoribbons