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In an ideal bulk topological-insulator (TI) conducting surface statesprotected by time reversal symmetry enfold an insulating crystal. However, thearchetypical TI, Bi2Se3, is actually never insulating; it is in fact arelatively good metal. Nevertheless, it is the most studied system among allthe TIs, mainly due to its simple band-structure and large spin-orbit gap.Recently it was shown that copper intercalated Bi2Se3 becomes superconductingand it was suggested as a realization of a topological superconductor (TSC).Here we use a combination of techniques that are sensitive to the shape of theFermi surface (FS): the Shubnikov-de Haas (SdH) effect and angle resolvedphotoemission spectroscopy (ARPES) to study the evolution of the FS shape withcarrier concentration, n. We find that as n increases, the FS becomes 2D-like.These results are of crucial importance for understanding the superconductingproperties of CuxBi2Se3.

Evolution of the fermi surface of a doped topological insulator with carrier concentration