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We investigate experimentally transport in gated microsctructures containinga band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocalresistances using many contacts prove that in the depletion regime the currentis carried by the edge channels, as expected for a two-dimensional topologicalinsulator. However, high and non-quantized values of channel resistances showthat the topological protection length (i.e. the distance on which the carriersin helical edge channels propagate without backscattering) is much shorter thanthe channel length, which is ~100 micrometers. The weak temperature dependenceof the resistance and the presence of temperature dependent reproduciblequasi-periodic resistance fluctuations can be qualitatively explained by thepresence of charge puddles in the well, to which the electrons from the edgechannels are tunnel-coupled.

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells