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We derive an analytical expression for the backaction dephasing rate, whichcharacterizes the disturbance induced by coupling with an environmentcontaining a quantum dot detector (QDD). In this letter, we show that chargenoise induces backaction dephasing in an explicit form. In the linear transportregime through a QDD, this backaction dephasing induced by charge noise can beexplained as a relaxation by an inelastic electron-electron scattering in Fermiliquid theory. In the low bias voltage regime, the increase or decrease ofdephasing rate depends on the QDD energy level, the linewidth functions, andhow to apply the bias voltage. Unlike quantum point contact, the dephasing ratewould be insensitive to the bias voltage in a high bias voltage regime becauseof the saturation of charge noise in a QDD.

Backaction Dephasing by a Quantum Dot Detector