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We have performed conductivity measurements on a Si-MOSFET sample with a slotin the upper gate, allowing for different electron densities n_1 and n_2 acrossthe slot. Dynamic longitudinal resistance was measured by a standard lock-intechnique, while maintaining a large DC current through the source-drainchannel. We find that in a parallel magnetic field, the resistance of thesample, R(I_DC), is asymmetric with respect to the direction of the DC current.The asymmetry becomes stronger with an increase of either the magnetic field orthe difference between n_1 and n_2. These observations are interpreted in termsof the effective spin injection: the degree of spin polarisation is differentin the two parts of the sample, implying different magnitudes of spin currentaway from the slot. The carriers thus leave the excess spin (of the appropriatesign) in the region around the slot, leading to spin accumulation (ordepletion) and to the spin drift-diffusion phenomena. Due to the positivemagnetoresistance of the two-dimensional electron gas, this change in a localmagnetisation affects the resistivity near the slot and the measured netresistance, giving rise to an asymmetric contribution. We further observe thatthe value of R(I_DC) saturates at large I_DC; we suggest that this is due toelectron tunnelling from the two-dimensional n-type layer into the p-typesilicon (or into another "spin reservoir") at the slot.

Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection