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A \ce{(LaVO_3)_6/(SrVO_3)_3} superlattice is studied with a combination ofsub-{\AA} resolved scanning transmission electron microscopy and monochromatedelectron energy-loss spectroscopy. The V oxidation state is mapped with atomicspatial resolution enabling to investigate electronic reconstruction at the\ce{LaVO_3}/\ce{SrVO_3} interfaces. Surprisingly, asymmetric chargedistribution is found at adjacent chemically symmetric interfaces. The localstructure is proposed and simulated with double channeling calculation whichagrees qualitatively with our experiment. We demonstrate that local strainasymmetry is the likely cause of the electronic asymmetry of the interfaces.The electronic reconstruction at the interfaces extends much further than thechemical composition, varying from 0.5 to 1.2 nm. This distance corresponds tothe length of charge transfer previously found in the\ce{(LaVO_3)_m}/\ce{(SrVO_3)_n} metal/insulating and the\ce{(LaAlO_3)_m}/\ce{(SrTiO_3)_n} insulating/insulating interfaces.

Mapping electronic reconstruction at the metal/insulator interfaces in \ce{LaVO_3/SrVO_3} heterostructures