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We use micro-Raman and photoluminescence (PL) spectroscopy at 300K toinvestigate the influence of uniaxial tensile strain on the vibrational andoptoelectronic properties of monolayer and bilayer MoS2 on a flexiblesubstrate. The initially degenerate E^1_{2g} Raman mode is split into a doubletas a direct consequence of the strain applied to MoS2 through Van der Waalscoupling at the sample-substrate interface. We observe a strong shift of thedirect band gap of 48meV/(% of strain) for the monolayer and 46meV/% for thebilayer, whose indirect gap shifts by 86meV/%. We find a strong decrease of thePL polarization linked to optical valley initialization for both monolayer andbilayer samples, indicating that scattering to the spin-degenerate Gamma valleyplays a key role.

Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2