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Electronic, transport, and spin properties of grain boundaries (GBs) areinvestigated in electrostatically doped graphene at finite electron densitieswithin the Hartree and Hubbard approximations. We demonstrate that depending onthe character of the GBs, the states residing on them can have a metalliccharacter with a zero group velocity or can be fully populated losing theability to carry a current. These states show qualitatively different featuresin charge accumulation and spin polarization. We also demonstrate that thesemiclassical Thomas-Fermi approach provides a satisfactory approximation tothe calculated self-consistent potential. The conductance of GBs is reduced dueto enhanced backscattering from this potential.

Electron interaction, charging and screening in grain boundaries in graphene