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We report the results of magnetoresistance measurements in vertical organicspin valves with the magnetic field oriented perpendicular to the layer stack.The magnetoresistance measurements were performed after carefully preparingeither parallel or antiparallel in-plane magnetization states of the magneticelectrodes in order to observe traces of Hanle precession. Due to the lowmobility in organic semiconductors the transit time of spin polarized carriersshould allow for precession of the spins in perpendicular fields which instatistical average would quench the magnetoresistance. However, in none of theexperiments we do observe any change in resistance while sweeping theperpendicular field, up to the point where the electrode's magnetization startsto reorient. This absence of Hanle type effects indicates that themagnetoresistance is not based on the injection of spin polarized electronsinto the organic semiconductor but rather on tunneling through pinholessuperimposed with tunneling anisotropic magnetoresistance.

Vertical organic spin valves in perpendicular magnetic fields