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We report the electron doping in the surface vicinity of KTaO_3 by inducingoxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility(> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haasoscillations with both two- and three-dimensional components. A disparity ofthe extracted in-plane effective mass, compared to the bulk values, suggestsmixing of the orbital characters. Our observations demonstrate that Ar^+-irradiation serves as a flexible tool to study low dimensional quantumtransport in 5d semiconducting oxides.

Coexistence of two- and three-dimensional Shubnikov-de Haas oscillations in Ar^+ -irradiated KTaO_3