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Thin films of topological insulator Bi_2Se_3 were deposited directly oninsulating ferromagnetic EuS. Unusual negative magnetoresistance was observednear the zero field below the Curie temperature (T_C), resembling the weaklocalization effect; whereas the usual positive magnetoresistance was recoveredabove T_C. Such negative magnetoresistance was only observed for Bi_2Se_3layers thinner than t~4nm, when its top and bottom surfaces are coupled. Theseresults provide evidence for a proximity effect between a topological insulatorand an insulating ferromagnet, laying the foundation for future realization ofthe half-integer quantized anomalous Hall effect in three-dimensionaltopological insulators.

Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface